ZTP25040DFHQTA
Diodes Incorporated
Diodes Incorporated
SS LOW SAT TRANSISTOR SOT23 T&R
$0.35
Available to order
Reference Price (USD)
1+
$0.34583
500+
$0.3423717
1000+
$0.3389134
1500+
$0.3354551
2000+
$0.3319968
2500+
$0.3285385
Exquisite packaging
Discount
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Optimize your electronic systems with the ZTP25040DFHQTA Bipolar Junction Transistor (BJT) from Diodes Incorporated. This single BJT transistor is engineered for high efficiency and reliability, making it a top choice for amplification and switching circuits. Ideal for use in renewable energy systems, robotics, and automation, the ZTP25040DFHQTA delivers superior performance in diverse environments. Diodes Incorporated's commitment to quality ensures that this transistor meets the highest industry standards. Upgrade your designs with this high-performance discrete semiconductor component.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 3 A
- Voltage - Collector Emitter Breakdown (Max): 40 V
- Vce Saturation (Max) @ Ib, Ic: 260mV @ 20mA, 1V
- Current - Collector Cutoff (Max): 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
- Power - Max: 730 mW
- Frequency - Transition: 270MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
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