ZTX325STOA
Diodes Incorporated
Diodes Incorporated
RF TRANS NPN 15V 1.3GHZ E-LINE
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Upgrade your RF circuits with the ZTX325STOA, a high-efficiency Bipolar Junction Transistor (BJT) from Diodes Incorporated. Part of the Discrete Semiconductor Products lineup, this transistor is designed for superior RF amplification and switching. Its high gain and low noise characteristics make it perfect for communication systems, broadcast equipment, and RF modules. The ZTX325STOA offers excellent thermal stability, high power handling, and long-lasting performance. Whether for consumer electronics or industrial applications, this transistor delivers consistent results. Choose Diodes Incorporated for innovative RF BJT technology that powers modern communication.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 15V
- Frequency - Transition: 1.3GHz
- Noise Figure (dB Typ @ f): 5dB @ 500MHz
- Gain: 53dB
- Power - Max: 350mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 2mA, 1V
- Current - Collector (Ic) (Max): 50mA
- Operating Temperature: -55°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: E-Line-3, Formed Leads
- Supplier Device Package: E-Line (TO-92 compatible)
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