ZTX605
Diodes Incorporated
Diodes Incorporated
TRANS NPN DARL 120V 1A E-LINE
$0.92
Available to order
Reference Price (USD)
1+
$0.96000
10+
$0.86800
100+
$0.68770
500+
$0.57728
1,000+
$0.46683
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with the ZTX605 Bipolar Junction Transistor (BJT) by Diodes Incorporated. This single BJT transistor is engineered for precision and reliability, featuring low saturation voltage and high current gain. Perfect for switching and amplification tasks, the ZTX605 is widely used in consumer electronics, industrial automation, and telecommunications. Its compact design and superior thermal performance make it a preferred choice for engineers worldwide. Trust Diodes Incorporated for high-quality discrete semiconductor products that meet the demands of modern electronics.
Specifications
- Product Status: Active
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 120 V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A
- Current - Collector Cutoff (Max): 10µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 5V
- Power - Max: 1 W
- Frequency - Transition: 150MHz
- Operating Temperature: -55°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: E-Line-3
- Supplier Device Package: E-Line (TO-92 compatible)
Related Products
Nexperia USA Inc.
PBHV8140Z,115
Diodes Incorporated
DJT4031N-13
Renesas Electronics America Inc
2SA1610-T2-A
Microchip Technology
JANTXV2N2219
onsemi
BUH51G
onsemi
2SD1803S-E
onsemi
2SD2203R
Diodes Incorporated
BC857BLP-7
Nexperia USA Inc.
BC847W,135
NTE Electronics, Inc