ZTX653
Diodes Incorporated

Diodes Incorporated
TRANS NPN 100V 2A E-LINE
$0.91
Available to order
Reference Price (USD)
1+
$0.96000
10+
$0.84300
100+
$0.65700
500+
$0.52900
1,000+
$0.43240
Exquisite packaging
Discount
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Optimize your electronic systems with the ZTX653 Bipolar Junction Transistor (BJT) from Diodes Incorporated. This single BJT transistor is engineered for high efficiency and reliability, making it a top choice for amplification and switching circuits. Ideal for use in renewable energy systems, robotics, and automation, the ZTX653 delivers superior performance in diverse environments. Diodes Incorporated's commitment to quality ensures that this transistor meets the highest industry standards. Upgrade your designs with this high-performance discrete semiconductor component.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 2 A
- Voltage - Collector Emitter Breakdown (Max): 100 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: 1 W
- Frequency - Transition: 175MHz
- Operating Temperature: -55°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: E-Line-3
- Supplier Device Package: E-Line (TO-92 compatible)