ZTX694BSTZ
Diodes Incorporated
Diodes Incorporated
TRANS NPN 120V 0.5A E-LINE
$0.94
Available to order
Reference Price (USD)
2,000+
$0.45090
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit designs with the ZTX694BSTZ Bipolar Junction Transistor (BJT) from Diodes Incorporated. This single BJT transistor offers exceptional performance in amplification and switching applications. Its high gain and low power dissipation make it suitable for use in audio equipment, sensors, and communication devices. The ZTX694BSTZ is built to withstand harsh environments, ensuring reliability in industrial and consumer applications. Trust Diodes Incorporated to deliver high-quality discrete semiconductor products that meet your technical requirements.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 500 mA
- Voltage - Collector Emitter Breakdown (Max): 120 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 400mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 200mA, 2V
- Power - Max: 1 W
- Frequency - Transition: 130MHz
- Operating Temperature: -55°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: E-Line-3, Formed Leads
- Supplier Device Package: E-Line (TO-92 compatible)
Related Products
onsemi
BF392ZL1
Diodes Incorporated
ZXTP25020DZTA
onsemi
SSVPZTA92T1
Diotec Semiconductor
BC857C
Microchip Technology
JANS2N4029
STMicroelectronics
STN851
Diodes Incorporated
FMMT549TA
Central Semiconductor Corp
2N4037 PBFREE
Microchip Technology
JANTX2N3635L
Toshiba Semiconductor and Storage