ZTX790AQSTZ
Diodes Incorporated
Diodes Incorporated
PWR LOW SAT TRANSISTOR EP3 AMMO
$0.43
Available to order
Reference Price (USD)
1+
$0.43350
500+
$0.429165
1000+
$0.42483
1500+
$0.420495
2000+
$0.41616
2500+
$0.411825
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the ZTX790AQSTZ Bipolar Junction Transistor (BJT) from Diodes Incorporated, a key component in discrete semiconductor products. This single BJT transistor excels in high-speed switching and linear amplification applications. With its low noise and high gain characteristics, the ZTX790AQSTZ is perfect for audio amplifiers, signal processing, and RF circuits. Designed for durability and performance, this transistor is a must-have for hobbyists and professionals alike. Choose Diodes Incorporated for reliable and efficient electronic components that power innovation.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 2 A
- Voltage - Collector Emitter Breakdown (Max): 40 V
- Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 2A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
- Power - Max: 1 W
- Frequency - Transition: 100MHz
- Operating Temperature: -55°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: E-Line-3, Formed Leads
- Supplier Device Package: E-Line (TO-92 compatible)
Related Products
Microchip Technology
JANTX2N2907AP
Microchip Technology
2N327A
Microchip Technology
JANSL2N2369AUA
Microchip Technology
JANSM2N2906AUBC
Diodes Incorporated
MJD31CUQ-13
Microchip Technology
2N2879
onsemi
2SB1323-TD-E
Renesas Electronics America Inc
CE2A3Q-T-AZ
Microchip Technology
2N3467
Renesas Electronics America Inc