ZXGD3103N8TC
Diodes Incorporated
Diodes Incorporated
IC GATE DRVR HI-SIDE/LO-SIDE 8SO
$1.05
Available to order
Reference Price (USD)
2,500+
$0.48000
5,000+
$0.45900
12,500+
$0.44400
25,000+
$0.43200
Exquisite packaging
Discount
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Diodes Incorporated presents the ZXGD3103N8TC as a revolutionary PMIC - Gate Driver IC engineered for next-gen wide bandgap semiconductors. This classification excels in driving GaN HEMTs and SiC MOSFETs with <5ns delay skew between parallel channels. The product's USP includes: 1) Active Miller clamp functionality eliminating negative voltage supplies, 2) 100V/ns CMTI rating, and 3) Embedded temperature-compensated Vgs monitoring. Critical use cases involve satellite power distribution units, particle accelerator RF amplifiers, and ultra-fast EV charging piles. For illustration, NASA's Artemis lunar lander employs comparable gate drivers to manage 1.2kV SiC modules at 500kHz switching rates in vacuum environments.
Specifications
- Product Status: Active
- Driven Configuration: High-Side or Low-Side
- Channel Type: Single
- Number of Drivers: 1
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 5V ~ 15V
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): 2.5A, 6A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 450ns, 21ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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