ZXM62P02E6TA
Diodes Incorporated
Diodes Incorporated
MOSFET P-CH 20V 2.3A SOT23-6
$0.82
Available to order
Reference Price (USD)
3,000+
$0.34105
6,000+
$0.32015
15,000+
$0.30970
30,000+
$0.30400
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The ZXM62P02E6TA from Diodes Incorporated redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the ZXM62P02E6TA offers the precision and reliability you need. Trust Diodes Incorporated to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
- Rds On (Max) @ Id, Vgs: 200mOhm @ 1.6A, 4.5V
- Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 4.5 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 1.1W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-6
- Package / Case: SOT-23-6
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