ZXMC10A816N8TC
Diodes Incorporated
Diodes Incorporated
MOSFET N/P-CH 100V 2A 8-SOIC
$1.07
Available to order
Reference Price (USD)
2,500+
$0.48720
5,000+
$0.46564
12,500+
$0.45024
25,000+
$0.44800
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The ZXMC10A816N8TC by Diodes Incorporated is a high-performance component within the Discrete Semiconductor Products category. Designed as part of the Transistors - FETs, MOSFETs - Arrays series, it offers exceptional durability and efficiency for power-sensitive applications. From medical equipment to aerospace technology, the ZXMC10A816N8TC provides reliable operation under stringent conditions. Diodes Incorporated's innovative approach ensures this MOSFET array meets the needs of modern electronics.
Specifications
- Product Status: Active
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 2A
- Rds On (Max) @ Id, Vgs: 230mOhm @ 1A, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 497pF @ 50V
- Power - Max: 1.8W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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