ZXMC3F31DN8TA
Diodes Incorporated
Diodes Incorporated
MOSFET N/P-CH 30V 6.8A/4.9A 8SO
$0.78
Available to order
Reference Price (USD)
500+
$0.43200
1,000+
$0.35280
2,500+
$0.32310
5,000+
$0.30330
12,500+
$0.29340
25,000+
$0.28800
Exquisite packaging
Discount
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The ZXMC3F31DN8TA from Diodes Incorporated is a versatile and high-efficiency component in the Discrete Semiconductor Products lineup. As part of the Transistors - FETs, MOSFETs - Arrays family, it offers excellent thermal stability and low gate charge, making it ideal for high-power applications. From renewable energy systems to telecommunications infrastructure, the ZXMC3F31DN8TA provides reliable performance in demanding environments. Choose Diodes Incorporated for innovative semiconductor solutions that drive technological advancement.
Specifications
- Product Status: Active
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate, 4.5V Drive
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 6.8A, 4.9A
- Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12.9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 608pF @ 15V
- Power - Max: 1.8W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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