ZXMHC10A07T8TA
Diodes Incorporated

Diodes Incorporated
MOSFET 2N/2P-CH 100V 1A/0.8A SM8
$1.01
Available to order
Reference Price (USD)
1,000+
$0.87725
2,000+
$0.81675
5,000+
$0.78650
10,000+
$0.77000
Exquisite packaging
Discount
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Discover the high-performance ZXMHC10A07T8TA from Diodes Incorporated, a premium addition to our Discrete Semiconductor Products collection. This Transistors - FETs, MOSFETs - Arrays component is engineered for efficiency and reliability, offering exceptional switching speeds and low power consumption. Ideal for power management and amplification circuits, this MOSFET array ensures minimal heat generation and superior durability. Whether you're designing industrial automation systems, automotive electronics, or consumer gadgets, the ZXMHC10A07T8TA delivers unmatched performance. Trust Diodes Incorporated's cutting-edge technology to meet your demanding application needs.
Specifications
- Product Status: Active
- FET Type: 2 N and 2 P-Channel (Half Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 1A, 800mA
- Rds On (Max) @ Id, Vgs: 700mOhm @ 1.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 138pF @ 60V
- Power - Max: 1.3W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-223-8
- Supplier Device Package: SM8