ZXMN10B08E6QTA
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 61V~100V SOT26 T&R
$0.39
Available to order
Reference Price (USD)
1+
$0.39492
500+
$0.3909708
1000+
$0.3870216
1500+
$0.3830724
2000+
$0.3791232
2500+
$0.375174
Exquisite packaging
Discount
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Enhance your electronic projects with the ZXMN10B08E6QTA single MOSFET from Diodes Incorporated. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Diodes Incorporated's ZXMN10B08E6QTA for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.3V, 10V
- Rds On (Max) @ Id, Vgs: 230mOhm @ 1.6A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 497 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 1.1W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-26
- Package / Case: SOT-23-6
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