ZXMN2B14FHTA
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 20V 3.5A SOT23-3
$0.87
Available to order
Reference Price (USD)
3,000+
$0.32060
6,000+
$0.29849
15,000+
$0.28743
30,000+
$0.28140
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The ZXMN2B14FHTA from Diodes Incorporated redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the ZXMN2B14FHTA offers the precision and reliability you need. Trust Diodes Incorporated to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 55mOhm @ 3.5A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 872 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
Related Products
onsemi
FCH104N60F
STMicroelectronics
STF7N60DM2
Vishay Siliconix
IRFR220TRLPBF
Vishay Siliconix
SIA429DJT-T1-GE3
onsemi
FDP65N06
Infineon Technologies
IPW60R045CPFKSA1
onsemi
NVTA7002NT1G
onsemi
FQPF32N20C
Vishay Siliconix
SUD35N10-26P-E3
Infineon Technologies