Shopping cart

Subtotal: $0.00

ZXMN3A01ZTA

Diodes Incorporated
ZXMN3A01ZTA Preview
Diodes Incorporated
MOSFET N-CH 30V 2.2A SOT89
$0.51
Available to order
Reference Price (USD)
1,000+
$0.20700
2,000+
$0.19050
5,000+
$0.17950
10,000+
$0.16850
25,000+
$0.16080
50,000+
$0.16000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 120mOhm @ 2.5A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 186 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 970mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-89-3
  • Package / Case: TO-243AA

Related Products

Infineon Technologies

BSR315PH6327XTSA1

NXP USA Inc.

BUK7514-60E,127

Toshiba Semiconductor and Storage

SSM3J140TU,LF

Vishay Siliconix

IRF510STRRPBF

NXP USA Inc.

PH8030L,115

Diodes Incorporated

DMP2022LSSQ-13

Renesas Electronics America Inc

2SK2090-T2-A

Top