ZXMN3A04DN8TA
Diodes Incorporated
Diodes Incorporated
MOSFET 2N-CH 30V 6.5A 8-SOIC
$1.91
Available to order
Reference Price (USD)
1+
$1.91000
500+
$1.8909
1000+
$1.8718
1500+
$1.8527
2000+
$1.8336
2500+
$1.8145
Exquisite packaging
Discount
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The ZXMN3A04DN8TA from Diodes Incorporated is a versatile and high-efficiency component in the Discrete Semiconductor Products lineup. As part of the Transistors - FETs, MOSFETs - Arrays family, it offers excellent thermal stability and low gate charge, making it ideal for high-power applications. From renewable energy systems to telecommunications infrastructure, the ZXMN3A04DN8TA provides reliable performance in demanding environments. Choose Diodes Incorporated for innovative semiconductor solutions that drive technological advancement.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 6.5A
- Rds On (Max) @ Id, Vgs: 20mOhm @ 12.6A, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs: 36.8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1890pF @ 15V
- Power - Max: 1.81W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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