ZXMN6A25DN8TA
Diodes Incorporated
Diodes Incorporated
MOSFET 2N-CH 60V 3.8A 8-SOIC
$1.44
Available to order
Reference Price (USD)
500+
$0.78776
1,000+
$0.63640
2,500+
$0.59856
5,000+
$0.57207
12,500+
$0.55315
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Choose the ZXMN6A25DN8TA from Diodes Incorporated for your Discrete Semiconductor Products needs. This Transistors - FETs, MOSFETs - Arrays solution is built for high-power and high-frequency applications, delivering excellent performance with minimal energy loss. Perfect for automotive electronics, wireless charging, and industrial control systems, the ZXMN6A25DN8TA stands out for its reliability and efficiency. Diodes Incorporated's advanced engineering makes this component a trusted choice for professionals.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 3.8A
- Rds On (Max) @ Id, Vgs: 50mOhm @ 3.6A, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs: 20.4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1063pF @ 30V
- Power - Max: 1.8W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
Related Products
Microchip Technology
APTM10TAM09FPG
Texas Instruments
CSD87330Q3D
Microchip Technology
TC2320TG-G
Wolfspeed, Inc.
CAS480M12HM3
Diodes Incorporated
DMNH6022SSD-13
Diodes Incorporated
DMNH4026SSDQ-13
Fairchild Semiconductor
FDS6900AS
Diodes Incorporated
DMC2038LVT-7
Fairchild Semiconductor
FDW2506P
Panjit International Inc.