ZXT13N50DE6QTA
Diodes Incorporated
Diodes Incorporated
PWR LOW SAT TRANSISTOR SOT26 T&R
$0.38
Available to order
Reference Price (USD)
1+
$0.38241
500+
$0.3785859
1000+
$0.3747618
1500+
$0.3709377
2000+
$0.3671136
2500+
$0.3632895
Exquisite packaging
Discount
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The ZXT13N50DE6QTA from Diodes Incorporated is a high-performance Bipolar Junction Transistor (BJT) designed for a wide range of electronic applications. This discrete semiconductor product offers excellent amplification and switching capabilities, making it ideal for both low-power and high-power circuits. With its robust construction and reliable performance, the ZXT13N50DE6QTA ensures long-term durability and efficiency. Whether you're designing audio amplifiers, power supplies, or motor control systems, this BJT transistor delivers consistent results. Explore the versatility of ZXT13N50DE6QTA and enhance your electronic projects with this top-quality component from Diodes Incorporated.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 4 A
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Vce Saturation (Max) @ Ib, Ic: 230mV @ 100mA, 4A
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 2V
- Power - Max: 1.1 W
- Frequency - Transition: 115MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6
- Supplier Device Package: SOT-26
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Diodes Incorporated