ZXT13N50DE6TA
Diodes Incorporated
Diodes Incorporated
TRANS NPN 50V 4A SOT26
$0.72
Available to order
Reference Price (USD)
3,000+
$0.31005
6,000+
$0.29115
15,000+
$0.28800
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit designs with the ZXT13N50DE6TA Bipolar Junction Transistor (BJT) from Diodes Incorporated. This single BJT transistor offers exceptional performance in amplification and switching applications. Its high gain and low power dissipation make it suitable for use in audio equipment, sensors, and communication devices. The ZXT13N50DE6TA is built to withstand harsh environments, ensuring reliability in industrial and consumer applications. Trust Diodes Incorporated to deliver high-quality discrete semiconductor products that meet your technical requirements.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 4 A
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Vce Saturation (Max) @ Ib, Ic: 180mV @ 400mA, 4A
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 2V
- Power - Max: 1.1 W
- Frequency - Transition: 115MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6
- Supplier Device Package: SOT-26
Related Products
onsemi
NSS60200SMTTBG
Microchip Technology
JANTXV2N2906AUB/TR
Nexperia USA Inc.
MJD42C-QJ
onsemi
KSA940TU
onsemi
MPSA06RL1G
Infineon Technologies
BCR119WE6327
STMicroelectronics
BD677A
onsemi
BC858BLT3G
Central Semiconductor Corp
CMPTA27 TR PBFREE
NXP USA Inc.