ZXT13P40DE6QTA
Diodes Incorporated
Diodes Incorporated
PWR LOW SAT TRANSISTOR SOT26 T&R
$0.38
Available to order
Reference Price (USD)
1+
$0.38164
500+
$0.3778236
1000+
$0.3740072
1500+
$0.3701908
2000+
$0.3663744
2500+
$0.362558
Exquisite packaging
Discount
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The ZXT13P40DE6QTA Bipolar Junction Transistor (BJT) by Diodes Incorporated is a versatile component in the discrete semiconductor products category. Designed for single-stage amplification and switching, this BJT transistor is widely used in medical devices, instrumentation, and power electronics. With its excellent thermal stability and low leakage current, the ZXT13P40DE6QTA provides consistent performance in demanding applications. Choose Diodes Incorporated for cutting-edge semiconductor solutions that drive innovation and efficiency in your projects.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 3 A
- Voltage - Collector Emitter Breakdown (Max): 40 V
- Vce Saturation (Max) @ Ib, Ic: 240mV @ 300mA, 3A
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 2V
- Power - Max: 1.1 W
- Frequency - Transition: 115MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6
- Supplier Device Package: SOT-26
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Diodes Incorporated