ZXTC2063E6TA
Diodes Incorporated
Diodes Incorporated
TRANS NPN/PNP 40V 3.5A/3A SOT23
$0.80
Available to order
Reference Price (USD)
3,000+
$0.34450
6,000+
$0.32350
15,000+
$0.32000
Exquisite packaging
Discount
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The ZXTC2063E6TA BJT Array from Diodes Incorporated brings military-grade robustness to commercial applications. With a wide operating temperature range (-55 C to +150 C), this Discrete Semiconductor Product performs flawlessly in downhole drilling equipment and satellite subsystems. Its symmetrical layout simplifies heat sink integration for high-power RF amplifiers. The ZXTC2063E6TA undergoes rigorous Q-Class testing to guarantee radiation hardness for aerospace deployments.
Specifications
- Product Status: Active
- Transistor Type: NPN, PNP
- Current - Collector (Ic) (Max): 3.5A, 3A
- Voltage - Collector Emitter Breakdown (Max): 40V
- Vce Saturation (Max) @ Ib, Ic: 195mV @ 350mA, 3.5A, 175mV @ 300mA, 3A
- Current - Collector Cutoff (Max): 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V / 200 @ 1A, 2V
- Power - Max: 1.1W
- Frequency - Transition: 190MHz, 270MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6
- Supplier Device Package: SOT-26
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