ZXTC6718MCQTA
Diodes Incorporated
Diodes Incorporated
PWR LOW SAT TRANSISTOR U-DFN3020
$0.46
Available to order
Reference Price (USD)
3,000+
$0.51770
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Precision meets power in the ZXTC6718MCQTA BJT Array by Diodes Incorporated. Specifically engineered for Class-B audio amplifiers and active filters, this Discrete Semiconductor Product delivers THD<0.1% for studio-grade sound reproduction. Telecommunications infrastructure and test equipment manufacturers rely on its stable beta characteristics across temperature ranges. The ZXTC6718MCQTA comes with anti-oxidation terminals, ensuring solderability even after prolonged storage.
Specifications
- Product Status: Active
- Transistor Type: NPN, PNP
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): 20V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 125mA, 4.5A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 200mA, 2V
- Power - Max: 1.5W
- Frequency - Transition: 100MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-WDFN Exposed Pad
- Supplier Device Package: W-DFN3020-8
Related Products
Nexperia USA Inc.
PMBT3904RAZ
Microchip Technology
2N5795
Nexperia USA Inc.
BC847BPNH-QF
Microchip Technology
MSR2N2369AU/TR
Panjit International Inc.
BC856BS_R1_00001
Microchip Technology
2N5794U/TR
Microchip Technology
JANSF2N3810U/TR
Microchip Technology
2N5793AU/TR
Microchip Technology
JANSD2N3810
Panjit International Inc.