ZXTD619MCTA
Diodes Incorporated
Diodes Incorporated
TRANS 2NPN 50V 4A 8DFN
$0.34
Available to order
Reference Price (USD)
3,000+
$0.37895
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The ZXTD619MCTA BJT Array from Diodes Incorporated brings military-grade robustness to commercial applications. With a wide operating temperature range (-55 C to +150 C), this Discrete Semiconductor Product performs flawlessly in downhole drilling equipment and satellite subsystems. Its symmetrical layout simplifies heat sink integration for high-power RF amplifiers. The ZXTD619MCTA undergoes rigorous Q-Class testing to guarantee radiation hardness for aerospace deployments.
Specifications
- Product Status: Active
- Transistor Type: 2 NPN (Dual)
- Current - Collector (Ic) (Max): 4A
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 320mV @ 200mA, 4A
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 200mA, 2V
- Power - Max: 1.7W
- Frequency - Transition: 100MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-WDFN Exposed Pad
- Supplier Device Package: W-DFN3020-8
Related Products
Toshiba Semiconductor and Storage
2SC4944-Y(TE85L,F)
Micro Commercial Co
DMMT3904-TP
Rohm Semiconductor
EMT2T2R
Diodes Incorporated
DMMT5401-7-F
onsemi
BC848CDXV6T5
Rohm Semiconductor
EMZ8T2R
Toshiba Semiconductor and Storage
HN1C01FE-GR,LF
Allegro MicroSystems
ULS2067H-883
Infineon Technologies
SMBT3904UPNE6327HTSA1
Linear Integrated Systems, Inc.