ZXTD6717E6QTA
Diodes Incorporated

Diodes Incorporated
SS LOW SAT TRANSISTOR SOT26
$0.37
Available to order
Reference Price (USD)
1+
$0.37026
500+
$0.3665574
1000+
$0.3628548
1500+
$0.3591522
2000+
$0.3554496
2500+
$0.351747
Exquisite packaging
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Discover the ZXTD6717E6QTA BJT Array by Diodes Incorporated, a versatile solution for modern electronic designs. This transistor array excels in high-speed switching and linear amplification, featuring matched pairs for consistent performance. Commonly used in audio amplifiers, LED drivers, and power management systems, the ZXTD6717E6QTA is a staple in telecommunications and renewable energy applications. With robust construction and ESD protection, it meets stringent industry standards while simplifying PCB layout for compact devices.
Specifications
- Product Status: Active
- Transistor Type: NPN, PNP
- Current - Collector (Ic) (Max): 1.5A, 1.25A
- Voltage - Collector Emitter Breakdown (Max): 15V, 12V
- Vce Saturation (Max) @ Ib, Ic: 245mV @ 20mA, 1.5A, 240mV @ 100mA, 1.25A
- Current - Collector Cutoff (Max): 10nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
- Power - Max: 1.1W
- Frequency - Transition: 180MHz, 220MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6
- Supplier Device Package: SOT-26