ZXTN04120HFFTA
Diodes Incorporated
Diodes Incorporated
TRANS NPN DARL 120V 1A SOT23F
$0.60
Available to order
Reference Price (USD)
3,000+
$0.21158
6,000+
$0.19793
15,000+
$0.18428
30,000+
$0.18200
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The ZXTN04120HFFTA from Diodes Incorporated is a high-performance Bipolar Junction Transistor (BJT) designed for a wide range of electronic applications. This discrete semiconductor product offers excellent amplification and switching capabilities, making it ideal for both low-power and high-power circuits. With its robust construction and reliable performance, the ZXTN04120HFFTA ensures long-term durability and efficiency. Whether you're designing audio amplifiers, power supplies, or motor control systems, this BJT transistor delivers consistent results. Explore the versatility of ZXTN04120HFFTA and enhance your electronic projects with this top-quality component from Diodes Incorporated.
Specifications
- Product Status: Active
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 120 V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 5mA, 2A
- Current - Collector Cutoff (Max): 10µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 3000 @ 1A, 5V
- Power - Max: 1.5 W
- Frequency - Transition: 120MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-3 Flat Leads
- Supplier Device Package: SOT-23F
Related Products
Microchip Technology
JANKCC2N3500
Diodes Incorporated
DXTN07060BFG-7
Nexperia USA Inc.
PHPT60606NYX
Harris Corporation
2N6387
onsemi
MSD601-RT1G
Microchip Technology
2N3019S
NXP Semiconductors
PDTA143XU,115
STMicroelectronics
BD140-16
Rohm Semiconductor
2SC2412KT146S
onsemi