ZXTN25060BZTA
Diodes Incorporated
Diodes Incorporated
TRANS NPN 60V 5A SOT89-3
$0.60
Available to order
Reference Price (USD)
1,000+
$0.25805
2,000+
$0.23758
5,000+
$0.22393
10,000+
$0.21028
25,000+
$0.20800
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with the ZXTN25060BZTA Bipolar Junction Transistor (BJT) from Diodes Incorporated. This single BJT transistor is engineered for high efficiency and reliability, making it a top choice for amplification and switching circuits. Ideal for use in renewable energy systems, robotics, and automation, the ZXTN25060BZTA delivers superior performance in diverse environments. Diodes Incorporated's commitment to quality ensures that this transistor meets the highest industry standards. Upgrade your designs with this high-performance discrete semiconductor component.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 5 A
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 305mV @ 500mA, 5A
- Current - Collector Cutoff (Max): 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 2V
- Power - Max: 2.4 W
- Frequency - Transition: 185MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: SOT-89-3
Related Products
onsemi
CPH3109-TL-E
Nexperia USA Inc.
BC807K-25R
Infineon Technologies
BSP61H6327XTSA1
MACOM Technology Solutions
JANTX2N5153
Nexperia USA Inc.
BC860CW,115
NTE Electronics, Inc
NTE288
NTE Electronics, Inc
NTE2330
Fairchild Semiconductor
KST4403MTF
onsemi
2SB1121S-TD-E
onsemi