ZXTP2009ZQTA
Diodes Incorporated
Diodes Incorporated
TRANS PNP 40V 5.5A SOT89-3
$0.46
Available to order
Reference Price (USD)
1+
$0.45712
500+
$0.4525488
1000+
$0.4479776
1500+
$0.4434064
2000+
$0.4388352
2500+
$0.434264
Exquisite packaging
Discount
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The ZXTP2009ZQTA Bipolar Junction Transistor (BJT) from Diodes Incorporated is a standout in the discrete semiconductor products category. Designed for single-stage amplification and high-speed switching, this BJT transistor is widely used in automotive, aerospace, and consumer electronics. With its excellent thermal performance and high current capacity, the ZXTP2009ZQTA is a reliable component for demanding applications. Diodes Incorporated's dedication to innovation ensures that this transistor meets the evolving needs of the electronics industry. Elevate your designs with this high-performance BJT transistor.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 5.5 A
- Voltage - Collector Emitter Breakdown (Max): 40 V
- Vce Saturation (Max) @ Ib, Ic: 185mV @ 550mA, 5.5A
- Current - Collector Cutoff (Max): 20nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
- Power - Max: 900 mW
- Frequency - Transition: 152MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: SOT-89-3
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