ZXTP56060FDBQ-7
Diodes Incorporated
Diodes Incorporated
SS LOW SAT TRANSISTOR U-DFN2020-
$0.49
Available to order
Reference Price (USD)
3,000+
$0.19189
6,000+
$0.18086
15,000+
$0.16984
30,000+
$0.16800
Exquisite packaging
Discount
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Meet the ZXTP56060FDBQ-7 Diodes Incorporated s answer to high-density transistor requirements in SMT assemblies. This BJT Array offers isolated transistors with individual thermal paths, preventing thermal runaway in power regulators. Widely adopted in server farms and 5G base stations, the ZXTP56060FDBQ-7 demonstrates exceptional MTBF ratings. Its moisture-resistant packaging complies with JEDEC Level 3 standards, ideal for humid operating conditions.
Specifications
- Product Status: Active
- Transistor Type: 2 PNP (Dual)
- Current - Collector (Ic) (Max): 2A
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 450mV @ 200mA, 2A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 170 @ 100mA, 2V
- Power - Max: 510mW
- Frequency - Transition: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-UDFN Exposed Pad
- Supplier Device Package: U-DFN2020-6
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