
Transistors - FETs, MOSFETs - RF
Transistors - FETs, MOSFETs - RF
Definition:
Transistors - FETs (Field-Effect Transistors), MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) - RF (Radio Frequency) are specialized semiconductor devices designed for high-frequency signal amplification and switching in RF applications. These components are optimized for performance in wireless communication, radar systems, satellite technology, and other high-frequency circuits, offering low noise, high gain, and efficient power handling.
Types of Products in This Category:
This classification includes a variety of RF-optimized transistors, such as:
- RF FETs: Designed for low-noise amplification in high-frequency circuits.
- RF MOSFETs: Provide high-power efficiency and thermal stability for RF power amplification.
- LDMOS (Laterally Diffused MOSFETs): Ideal for high-power RF applications like base stations and broadcast systems.
- GaN (Gallium Nitride) FETs/MOSFETs: Deliver superior high-frequency performance and power density for advanced RF systems.
- HEMT (High Electron Mobility Transistors): Used in millimeter-wave and microwave applications due to their high-speed switching capabilities.
Purchasing Recommendations:
When selecting RF FETs or MOSFETs, consider the following factors:
- Frequency Range: Ensure the device supports the required operating frequency (e.g., UHF, VHF, microwave).
- Power Handling: Match the transistor s power rating (e.g., wattage) with your application s demands.
- Noise Figure (NF): Critical for receiver circuits; lower NF ensures better signal clarity.
- Package Type: Choose between surface-mount (SMD) or through-hole based on PCB design requirements.
- Supplier Reliability: Opt for reputable manufacturers (e.g., Infineon, Qorvo, NXP) to ensure consistent performance and longevity.
This category is essential for engineers and designers working on cutting-edge RF systems, where precision, efficiency, and signal integrity are paramount.
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Categories
MRF1K50GNR5
RF MOSFET LDMOS 50 OM1230G
ASC2406
HIGH POWER AMPLIFIER
GTVA126001EC-V1-R0
600W GAN HEMT 50V 1.2-1.4GHZ FET
CGHV96130F-AMP
8.4-9.6GHZ, AMP W/ CGHV96100F2
BLS9G2735L-50U
RF MOSFET SOT1135A
BLF6G38S-25,112
RF FET LDMOS 65V 15DB SOT608B
BLF2324M8LS200PU
RF FET LDMOS 65V 17.2DB SOT539B
VRF154FL
MOSFET RF PWR N-CH 50V 600W T2
BLF2425M7L250P,118
RF FET LDMOS 65V 15DB SOT539A
MRF8S9170NR3
RF ULTRA HIGH FREQUENCY BAND, N-
GTVA220701FA-V1-R0
RF SIC HEMT 70W,1805 - 2170MHZ
PXAD184218FV-V1-R2
IC AMP RF LDMOS H-37275G-6
BLF8G24LS-100GVJ
RF FET LDMOS 65V 18DB SOT1244C
MMRF1317HR5
TRANS 1030MHZ 1550W PEAK 50V
A3G26D055NT4
RF GAN MOSFET AIRFAST 8W 48V
CGH40120F
RF MOSFET HEMT 28V 440193
BLA6H0912-500,112
RF FET LDMOS 100V 17DB SOT634A
BLF8G20LS-230VU
RF FET LDMOS 65V 18DB SOT1239B
VRF151G
MOSFET RF PWR N-CH 50V 300W M208
PD57018STR-E
TRANSISTOR RF POWERSO-10