1EBN1002AEXUMA1
Infineon Technologies
Infineon Technologies
ISOLATED_HVGD PG-DSO-14
$2.43
Available to order
Reference Price (USD)
1+
$2.43360
500+
$2.409264
1000+
$2.384928
1500+
$2.360592
2000+
$2.336256
2500+
$2.31192
Exquisite packaging
Discount
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Infineon Technologies presents the 1EBN1002AEXUMA1 as a revolutionary PMIC - Gate Driver IC engineered for next-gen wide bandgap semiconductors. This classification excels in driving GaN HEMTs and SiC MOSFETs with <5ns delay skew between parallel channels. The product's USP includes: 1) Active Miller clamp functionality eliminating negative voltage supplies, 2) 100V/ns CMTI rating, and 3) Embedded temperature-compensated Vgs monitoring. Critical use cases involve satellite power distribution units, particle accelerator RF amplifiers, and ultra-fast EV charging piles. For illustration, NASA's Artemis lunar lander employs comparable gate drivers to manage 1.2kV SiC modules at 500kHz switching rates in vacuum environments.
Specifications
- Product Status: Active
- Driven Configuration: -
- Channel Type: Independent
- Number of Drivers: 6
- Gate Type: IGBT
- Voltage - Supply: 8V ~ 18V
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): -
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): -
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
- Supplier Device Package: PG-DSO-14-43
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