1SP0335V2M1C-FZ600R65KF2
Power Integrations
Power Integrations
IGBT GATE DRIVER P/P 1CH SCALE-2
$271.31
Available to order
Reference Price (USD)
1+
$271.31167
500+
$268.5985533
1000+
$265.8854366
1500+
$263.1723199
2000+
$260.4592032
2500+
$257.7460865
Exquisite packaging
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Power Integrations presents the 1SP0335V2M1C-FZ600R65KF2 as a revolutionary PMIC - Gate Driver IC engineered for next-gen wide bandgap semiconductors. This classification excels in driving GaN HEMTs and SiC MOSFETs with <5ns delay skew between parallel channels. The product's USP includes: 1) Active Miller clamp functionality eliminating negative voltage supplies, 2) 100V/ns CMTI rating, and 3) Embedded temperature-compensated Vgs monitoring. Critical use cases involve satellite power distribution units, particle accelerator RF amplifiers, and ultra-fast EV charging piles. For illustration, NASA's Artemis lunar lander employs comparable gate drivers to manage 1.2kV SiC modules at 500kHz switching rates in vacuum environments.
Specifications
- Product Status: Active
- Driven Configuration: High-Side or Low-Side
- Channel Type: Single
- Number of Drivers: 1
- Gate Type: IGBT
- Voltage - Supply: 23.5V ~ 26.5V
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): 35A, 35A
- Input Type: -
- High Side Voltage - Max (Bootstrap): 6500 V
- Rise / Fall Time (Typ): 9ns, 30ns
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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