1EDN8511BXUSA1
Infineon Technologies
Infineon Technologies
IC GATE DRV HALF BRD/LOW SOT23-6
$1.07
Available to order
Reference Price (USD)
3,000+
$0.54880
6,000+
$0.52565
Exquisite packaging
Discount
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Infineon Technologies's 1EDN8511BXUSA1 represents a breakthrough in multi-chip PMIC - Gate Driver ICs with integrated current sensing. This all-in-one solution combines: 1) 16-bit shunt monitor, 2) Isolated 2.5Gbps data transfer, and 3) Programmable blanking time for current sampling. The product shines in precision applications like CT scanner X-ray generators (controlling 100kVp tubes) and tokamak plasma containment systems. Field data from ITER fusion reactor shows the 1EDN8511BXUSA1 driver family maintaining 0.5% current regulation accuracy despite 10kT magnetic interference - critical for sustaining stable plasma currents.
Specifications
- Product Status: Active
- Driven Configuration: Half-Bridge, Low-Side
- Channel Type: Single
- Number of Drivers: 1
- Gate Type: N-Channel, P-Channel MOSFET
- Voltage - Supply: 8V ~ 20V
- Logic Voltage - VIL, VIH: 1.2V, 1.9V
- Current - Peak Output (Source, Sink): 4A, 8A
- Input Type: Inverting, Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 6.5ns, 4.5ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6
- Supplier Device Package: PG-SOT23-6-2
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Infineon Technologies