2DB1188P-13
Diodes Incorporated
Diodes Incorporated
TRANS PNP 32V 2A SOT89-3
$0.39
Available to order
Reference Price (USD)
2,500+
$0.14648
Exquisite packaging
Discount
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Discover the 2DB1188P-13 Bipolar Junction Transistor (BJT) from Diodes Incorporated, a key component in discrete semiconductor products. This single BJT transistor excels in high-speed switching and linear amplification applications. With its low noise and high gain characteristics, the 2DB1188P-13 is perfect for audio amplifiers, signal processing, and RF circuits. Designed for durability and performance, this transistor is a must-have for hobbyists and professionals alike. Choose Diodes Incorporated for reliable and efficient electronic components that power innovation.
Specifications
- Product Status: Obsolete
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 2 A
- Voltage - Collector Emitter Breakdown (Max): 32 V
- Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 500mA, 3V
- Power - Max: 1 W
- Frequency - Transition: 120MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: SOT-89-3
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