2DB1713-13
Diodes Incorporated
Diodes Incorporated
TRANS PNP 12V 3A SOT89-3
$0.49
Available to order
Reference Price (USD)
2,500+
$0.15460
5,000+
$0.14620
12,500+
$0.13780
25,000+
$0.12800
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The 2DB1713-13 from Diodes Incorporated is a high-performance Bipolar Junction Transistor (BJT) designed for a wide range of electronic applications. This discrete semiconductor product offers excellent amplification and switching capabilities, making it ideal for both low-power and high-power circuits. With its robust construction and reliable performance, the 2DB1713-13 ensures long-term durability and efficiency. Whether you're designing audio amplifiers, power supplies, or motor control systems, this BJT transistor delivers consistent results. Explore the versatility of 2DB1713-13 and enhance your electronic projects with this top-quality component from Diodes Incorporated.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 3 A
- Voltage - Collector Emitter Breakdown (Max): 12 V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 30mA, 1.5A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 500mA, 2V
- Power - Max: 900 mW
- Frequency - Transition: 180MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: SOT-89-3
Related Products
Diodes Incorporated
MJD350-13
Rohm Semiconductor
BSS63AT116
onsemi
BC638TA
NXP Semiconductors
BCW61B,215
STMicroelectronics
D45H11
Nexperia USA Inc.
PBSS302PDH
Nexperia USA Inc.
PBSS4480XZ
onsemi
BC557BZL1
Diotec Semiconductor
BC807-16-AQ
STMicroelectronics