2ED2108S06FXUMA1
Infineon Technologies
Infineon Technologies
IC HALF BRIDGE GATE DRIVER 650V
$2.27
Available to order
Reference Price (USD)
1+
$2.27000
500+
$2.2473
1000+
$2.2246
1500+
$2.2019
2000+
$2.1792
2500+
$2.1565
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power systems with Infineon Technologies's 2ED2108S06FXUMA1, a flagship PMIC - Gate Driver IC featuring dual-channel output with independent control. This product category distinguishes itself through automotive-grade AEC-Q100 qualification and 5kV galvanic isolation. The 2ED2108S06FXUMA1 demonstrates superior performance in: 1) reducing shoot-through current by 60% compared to conventional drivers, 2) supporting 2MHz switching frequency, and 3) offering DESAT protection for short-circuit prevention. Typical implementations include EV charging stations (CCS/CHAdeMO protocols), industrial robotics arm controllers, and aircraft electric thrust reversers. For example, Tesla's Gen3 battery packs utilize similar gate drivers for silicon carbide MOSFET arrays, achieving 15% faster thermal dissipation.
Specifications
- Product Status: Active
- Driven Configuration: Half-Bridge
- Channel Type: Synchronous
- Number of Drivers: 1
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 10V ~ 20V
- Logic Voltage - VIL, VIH: 1.1V, 1.7V
- Current - Peak Output (Source, Sink): 290mA, 700mA
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 650 V
- Rise / Fall Time (Typ): 100ns, 35ns
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: PG-DSO-8-53
Related Products
Texas Instruments
LM5101CMYE/NOPB
Diodes Incorporated
DGD0211CWT-7
Microchip Technology
TC4427AVUA
Infineon Technologies
1EDN7511BXUSA1
STMicroelectronics
L6388ED
Microchip Technology
TC426EPA
Renesas Electronics America Inc
ISL2111AR4Z
Texas Instruments
UC3705T
IXYS Integrated Circuits Division
IXDI614SI
Analog Devices Inc.