2ED2181S06FXUMA1
Infineon Technologies
Infineon Technologies
IC HALF BRIDGE GATE DRIVER 650V
$3.24
Available to order
Reference Price (USD)
1+
$3.24000
500+
$3.2076
1000+
$3.1752
1500+
$3.1428
2000+
$3.1104
2500+
$3.078
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Infineon Technologies presents the 2ED2181S06FXUMA1 as a revolutionary PMIC - Gate Driver IC engineered for next-gen wide bandgap semiconductors. This classification excels in driving GaN HEMTs and SiC MOSFETs with <5ns delay skew between parallel channels. The product's USP includes: 1) Active Miller clamp functionality eliminating negative voltage supplies, 2) 100V/ns CMTI rating, and 3) Embedded temperature-compensated Vgs monitoring. Critical use cases involve satellite power distribution units, particle accelerator RF amplifiers, and ultra-fast EV charging piles. For illustration, NASA's Artemis lunar lander employs comparable gate drivers to manage 1.2kV SiC modules at 500kHz switching rates in vacuum environments.
Specifications
- Product Status: Active
- Driven Configuration: High-Side or Low-Side
- Channel Type: Synchronous
- Number of Drivers: 1
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 10V ~ 20V
- Logic Voltage - VIL, VIH: 1.1V, 1.7V
- Current - Peak Output (Source, Sink): 2.5A, 2.5A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 650 V
- Rise / Fall Time (Typ): 15ns, 15ns
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: PG-DSO-8-53
Related Products
Texas Instruments
UCC27424DR
Microchip Technology
TC4451VOA713
Analog Devices Inc.
LTC4440AMPMS8E-5#PBF
Microchip Technology
TC4420IJA
Tamura
2DM180206CM
Infineon Technologies
IR2133SPBF
Texas Instruments
UCC27523DGN
Infineon Technologies
IRS2181PBF
Harris Corporation
HIP4081AIP
Renesas Electronics America Inc