2EDN8524GXTMA1
Infineon Technologies
Infineon Technologies
IC GATE DRVR LOW-SIDE 8WSON
$0.51
Available to order
Reference Price (USD)
4,000+
$0.72897
Exquisite packaging
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Infineon Technologies's 2EDN8524GXTMA1 represents the cutting edge of PMIC - Gate Driver technology, engineered to deliver unmatched switching performance for power electronics. This IC classification specializes in synchronous rectification and half-bridge configurations with integrated bootstrap diodes. Notable characteristics comprise UVLO protection, programmable turn-on/off thresholds, and 4A peak output current capacity. Primary applications span data center power supplies, welding equipment, and DC-DC converters. A concrete example: the 2EDN8524GXTMA1 enables 98% efficiency in 1kW telecom power modules while withstanding 100V/ns common-mode transients. The device's reinforced isolation meets IEC 61800-5-1 standards, particularly valuable for medical imaging systems and railway traction converters.
Specifications
- Product Status: Active
- Driven Configuration: Low-Side
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 4.5V ~ 20V
- Logic Voltage - VIL, VIH: 1.1V, 1.98V
- Current - Peak Output (Source, Sink): 5A, 5A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 5.3ns, 4.5ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-WDFN Exposed Pad
- Supplier Device Package: PG-WSON-8-1
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