UCC21222DR
Texas Instruments

Texas Instruments
IC GATE DRVR HALF-BRIDGE 16SOIC
$3.89
Available to order
Reference Price (USD)
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$3.89000
500+
$3.8511
1000+
$3.8122
1500+
$3.7733
2000+
$3.7344
2500+
$3.6955
Exquisite packaging
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Texas Instruments presents the UCC21222DR as a revolutionary PMIC - Gate Driver IC engineered for next-gen wide bandgap semiconductors. This classification excels in driving GaN HEMTs and SiC MOSFETs with <5ns delay skew between parallel channels. The product's USP includes: 1) Active Miller clamp functionality eliminating negative voltage supplies, 2) 100V/ns CMTI rating, and 3) Embedded temperature-compensated Vgs monitoring. Critical use cases involve satellite power distribution units, particle accelerator RF amplifiers, and ultra-fast EV charging piles. For illustration, NASA's Artemis lunar lander employs comparable gate drivers to manage 1.2kV SiC modules at 500kHz switching rates in vacuum environments.
Specifications
- Product Status: Active
- Driven Configuration: Half-Bridge
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 3V ~ 5.5V
- Logic Voltage - VIL, VIH: 1.25V, 1.6V
- Current - Peak Output (Source, Sink): 4A, 6A
- Input Type: CMOS/TTL
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 5ns, 6ns
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 16-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 16-SOIC