2N2907AE3
Microchip Technology
Microchip Technology
TRANS PNP 60V 0.6A TO18
$4.17
Available to order
Reference Price (USD)
1+
$4.17000
500+
$4.1283
1000+
$4.0866
1500+
$4.0449
2000+
$4.0032
2500+
$3.9615
Exquisite packaging
Discount
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Upgrade your electronic designs with the 2N2907AE3 Bipolar Junction Transistor (BJT) by Microchip Technology. This single BJT transistor is engineered for precision and reliability, featuring low saturation voltage and high current gain. Perfect for switching and amplification tasks, the 2N2907AE3 is widely used in consumer electronics, industrial automation, and telecommunications. Its compact design and superior thermal performance make it a preferred choice for engineers worldwide. Trust Microchip Technology for high-quality discrete semiconductor products that meet the demands of modern electronics.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 600 mA
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 50nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
- Power - Max: 500 mW
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-206AA, TO-18-3 Metal Can
- Supplier Device Package: TO-18
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