2N3583
NTE Electronics, Inc
NTE Electronics, Inc
TRANS NPN 175V 0.01A TO66
$3.09
Available to order
Reference Price (USD)
1+
$14.43000
10+
$13.12100
30+
$12.13667
120+
$11.15267
270+
$10.16863
510+
$9.51259
1,020+
$8.74720
Exquisite packaging
Discount
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The 2N3583 Bipolar Junction Transistor (BJT) from NTE Electronics, Inc is a standout in the discrete semiconductor products category. Designed for single-stage amplification and high-speed switching, this BJT transistor is widely used in automotive, aerospace, and consumer electronics. With its excellent thermal performance and high current capacity, the 2N3583 is a reliable component for demanding applications. NTE Electronics, Inc's dedication to innovation ensures that this transistor meets the evolving needs of the electronics industry. Elevate your designs with this high-performance BJT transistor.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 10 mA
- Voltage - Collector Emitter Breakdown (Max): 175 V
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): 10mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 10V
- Power - Max: 35 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-213AA, TO-66-2
- Supplier Device Package: TO-66 (TO-213AA)
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