2N4221A
NTE Electronics, Inc
NTE Electronics, Inc
T-JFET N CHANNEL
$7.56
Available to order
Reference Price (USD)
1+
$7.56000
500+
$7.4844
1000+
$7.4088
1500+
$7.3332
2000+
$7.2576
2500+
$7.182
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
NTE Electronics, Inc's 2N4221A sets new standards for JFET performance in the Discrete Semiconductor Products market. This depletion-mode field-effect transistor features specially processed silicon for minimal parameter dispersion and maximum yield. The innovative design reduces gate leakage current to femtoampere levels while maintaining fast switching characteristics. Primary applications include nuclear instrumentation, submarine cable repeaters, and satellite communication systems. The 2N4221A also excels in specialized uses like cryogenic electronics and radiation-hardened circuits. With its gold-metallized contacts and hermetic packaging options, this JFET is the preferred choice for mission-critical applications in extreme environments.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 30 V
- Drain to Source Voltage (Vdss): 30 V
- Current - Drain (Idss) @ Vds (Vgs=0): 2 mA @ 15 V
- Current Drain (Id) - Max: 15 mA
- Voltage - Cutoff (VGS off) @ Id: 6 V @ 100 pA
- Input Capacitance (Ciss) (Max) @ Vds: 6pF @ 15V
- Resistance - RDS(On): 400 Ohms
- Power - Max: 300 mW
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-206AF, TO-72-4 Metal Can
- Supplier Device Package: TO-72
Related Products
onsemi
MMBF4117
Linear Integrated Systems, Inc.
LS5911 SOT-23 6L
onsemi
2SK3666-3-TB-E
Linear Integrated Systems, Inc.
LSK170B TO-92 3L
Microchip Technology
2N4092UB/TR
Linear Integrated Systems, Inc.
SST174 SOT-23 3L
Linear Integrated Systems, Inc.
SST177 SOT-23 3L
Linear Integrated Systems, Inc.
SST201 SOT-23 3L
Linear Integrated Systems, Inc.
2N5114 TO-18 3L
onsemi