2N6036
NTE Electronics, Inc
NTE Electronics, Inc
TRANS PNP DARL 80V 4A TO126
$1.20
Available to order
Reference Price (USD)
1+
$0.68000
50+
$0.47020
100+
$0.45000
500+
$0.41850
1,000+
$0.40704
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with the 2N6036 Bipolar Junction Transistor (BJT) from NTE Electronics, Inc. This single BJT transistor is engineered for high efficiency and reliability, making it a top choice for amplification and switching circuits. Ideal for use in renewable energy systems, robotics, and automation, the 2N6036 delivers superior performance in diverse environments. NTE Electronics, Inc's commitment to quality ensures that this transistor meets the highest industry standards. Upgrade your designs with this high-performance discrete semiconductor component.
Specifications
- Product Status: Active
- Transistor Type: PNP - Darlington
- Current - Collector (Ic) (Max): 4 A
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A
- Current - Collector Cutoff (Max): 100µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V
- Power - Max: 40 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-225AA, TO-126-3
- Supplier Device Package: TO-126
Related Products
Nexperia USA Inc.
BC817-25QCH-QZ
onsemi
MJE16004
Fairchild Semiconductor
FJC790TF
Panjit International Inc.
BC857C_R1_00001
MACOM Technology Solutions
JANTX2N6287
Rohm Semiconductor
BC847BU3T106
Infineon Technologies
BCX6916H6327XTSA1
Microchip Technology
JANTXV2N2907AUB/TR
NTE Electronics, Inc
NTE251
Nexperia USA Inc.