2N6038G
onsemi
onsemi
TRANS NPN DARL 60V 4A TO126
$0.34
Available to order
Reference Price (USD)
1+
$0.77000
10+
$0.67300
100+
$0.51620
500+
$0.40804
1,000+
$0.32642
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with the 2N6038G Bipolar Junction Transistor (BJT) by onsemi. This single BJT transistor is engineered for precision and reliability, featuring low saturation voltage and high current gain. Perfect for switching and amplification tasks, the 2N6038G is widely used in consumer electronics, industrial automation, and telecommunications. Its compact design and superior thermal performance make it a preferred choice for engineers worldwide. Trust onsemi for high-quality discrete semiconductor products that meet the demands of modern electronics.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 4 A
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A
- Current - Collector Cutoff (Max): 100µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V
- Power - Max: 40 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-225AA, TO-126-3
- Supplier Device Package: TO-126
Related Products
Diotec Semiconductor
BC548A
Microchip Technology
JANKCB2N3440
Nexperia USA Inc.
PHPT61006PY,115
Toshiba Semiconductor and Storage
2SC6026MFVGR,L3F
Diodes Incorporated
BCX6825TA
Diodes Incorporated
ZXTN08400BFFTA
Nexperia USA Inc.
BC817-16QBZ
NTE Electronics, Inc
NTE58
Sanken
2SA1386A
onsemi