2N6059
NTE Electronics, Inc
NTE Electronics, Inc
TRANS NPN DARL 100V 12A TO3
$3.42
Available to order
Reference Price (USD)
100+
$45.28130
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The 2N6059 Bipolar Junction Transistor (BJT) from NTE Electronics, Inc is a standout in the discrete semiconductor products category. Designed for single-stage amplification and high-speed switching, this BJT transistor is widely used in automotive, aerospace, and consumer electronics. With its excellent thermal performance and high current capacity, the 2N6059 is a reliable component for demanding applications. NTE Electronics, Inc's dedication to innovation ensures that this transistor meets the evolving needs of the electronics industry. Elevate your designs with this high-performance BJT transistor.
Specifications
- Product Status: Active
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 12 A
- Voltage - Collector Emitter Breakdown (Max): 100 V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A
- Current - Collector Cutoff (Max): 1mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 6A, 3V
- Power - Max: 150 W
- Frequency - Transition: 4MHz
- Operating Temperature: 200°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: TO-204AA, TO-3
- Supplier Device Package: TO-3
Related Products
NTE Electronics, Inc
NTE128P
Nexperia USA Inc.
PHPT60606PYX
Infineon Technologies
BC817-16B5003
NTE Electronics, Inc
NTE2405
NTE Electronics, Inc
2N5428
Micro Commercial Co
MMS9013HE3-H-TP
Central Semiconductor Corp
CZT3019 TR PBFREE
onsemi
2SD613E
onsemi
BUV21G
Fairchild Semiconductor