2N6109
NTE Electronics, Inc
NTE Electronics, Inc
TRANS PNP 50V 7A TO220
$1.24
Available to order
Reference Price (USD)
1+
$1.81000
10+
$1.65000
25+
$1.47960
100+
$1.33810
250+
$1.19660
500+
$1.05510
1,000+
$0.88531
2,500+
$0.82871
5,000+
$0.81928
Exquisite packaging
Discount
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The 2N6109 Bipolar Junction Transistor (BJT) by NTE Electronics, Inc is a versatile component in the discrete semiconductor products category. Designed for single-stage amplification and switching, this BJT transistor is widely used in medical devices, instrumentation, and power electronics. With its excellent thermal stability and low leakage current, the 2N6109 provides consistent performance in demanding applications. Choose NTE Electronics, Inc for cutting-edge semiconductor solutions that drive innovation and efficiency in your projects.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 7 A
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Vce Saturation (Max) @ Ib, Ic: 3.5V @ 3A, 7A
- Current - Collector Cutoff (Max): 1mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 4V
- Power - Max: 40 W
- Frequency - Transition: 10MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220
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