2N6123
NTE Electronics, Inc
NTE Electronics, Inc
TRANS NPN 80V 4A TO220
$1.12
Available to order
Reference Price (USD)
1+
$2.29000
10+
$2.07000
25+
$1.84800
100+
$1.66320
400+
$1.47840
800+
$1.16794
1,200+
$1.07184
2,800+
$0.99792
5,200+
$0.98560
Exquisite packaging
Discount
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The 2N6123 from NTE Electronics, Inc is a high-performance Bipolar Junction Transistor (BJT) designed for a wide range of electronic applications. This discrete semiconductor product offers excellent amplification and switching capabilities, making it ideal for both low-power and high-power circuits. With its robust construction and reliable performance, the 2N6123 ensures long-term durability and efficiency. Whether you're designing audio amplifiers, power supplies, or motor control systems, this BJT transistor delivers consistent results. Explore the versatility of 2N6123 and enhance your electronic projects with this top-quality component from NTE Electronics, Inc.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 4 A
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: 1.4V @ 1A, 4A
- Current - Collector Cutoff (Max): 1mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1.5A, 2V
- Power - Max: 40 W
- Frequency - Transition: 2.5MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220
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