2N6129
Harris Corporation
Harris Corporation
NPN POWER TRANSISTOR
$0.95
Available to order
Reference Price (USD)
1+
$0.95000
500+
$0.9405
1000+
$0.931
1500+
$0.9215
2000+
$0.912
2500+
$0.9025
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with the 2N6129 Bipolar Junction Transistor (BJT) from Harris Corporation. This single BJT transistor is engineered for high efficiency and reliability, making it a top choice for amplification and switching circuits. Ideal for use in renewable energy systems, robotics, and automation, the 2N6129 delivers superior performance in diverse environments. Harris Corporation's commitment to quality ensures that this transistor meets the highest industry standards. Upgrade your designs with this high-performance discrete semiconductor component.
Specifications
- Product Status: Active
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
Related Products
MDD
BC846B
Nexperia USA Inc.
PBSS5160T,215
Microchip Technology
JANS2N2369AUB/TR
onsemi
BCP56-10T3G
Nexperia USA Inc.
BC857W,135
onsemi
NSVBC817-16LT1G
NTE Electronics, Inc
NTE342
Fairchild Semiconductor
MPSA05RA
Nexperia USA Inc.
BC846AQCZ
Diodes Incorporated