2N7002HWX
Nexperia USA Inc.
Nexperia USA Inc.
2N7002HW/SOT323/SC-70
$0.35
Available to order
Reference Price (USD)
1+
$0.35000
500+
$0.3465
1000+
$0.343
1500+
$0.3395
2000+
$0.336
2500+
$0.3325
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with the 2N7002HWX by Nexperia USA Inc., a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the 2N7002HWX is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 300mA (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 830mW (Tc)
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-236AB
- Package / Case: TO-236-3, SC-59, SOT-23-3
Related Products
Fairchild Semiconductor
ISL9N318AD3ST
Fairchild Semiconductor
HUF75925D3ST
Rohm Semiconductor
R6004END3TL1
STMicroelectronics
STP7NK80Z
onsemi
NTR4503NT1G
Infineon Technologies
IPP60R160P7XKSA1
IXYS
IXTT140P10T
Vishay Siliconix
SI2366DS-T1-GE3
Vishay Siliconix
IRLL014TRPBF-BE3
Vishay Siliconix