2N7002KW_R1_00001
Panjit International Inc.
Panjit International Inc.
SOT-323, MOSFET
$0.20
Available to order
Reference Price (USD)
1+
$0.20000
500+
$0.198
1000+
$0.196
1500+
$0.194
2000+
$0.192
2500+
$0.19
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The 2N7002KW_R1_00001 from Panjit International Inc. sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Panjit International Inc.'s 2N7002KW_R1_00001 for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 115mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 35 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 200mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-323
- Package / Case: SC-70, SOT-323
Related Products
onsemi
NTTFS5826NLTAG
Infineon Technologies
BSC886N03LSG
Fairchild Semiconductor
FDB7045L
Alpha & Omega Semiconductor Inc.
AON7524
STMicroelectronics
STL12P6F6
Micro Commercial Co
SI3134KE-TP
Infineon Technologies
BSO065N03MSGXUMA1
Toshiba Semiconductor and Storage
TK10A80W,S4X
Nexperia USA Inc.
PSMN5R5-60YS,115
Panjit International Inc.