Shopping cart

Subtotal: $0.00

TK10A80W,S4X

Toshiba Semiconductor and Storage
TK10A80W,S4X Preview
Toshiba Semiconductor and Storage
MOSFET N-CH 800V 9.5A TO220SIS
$2.52
Available to order
Reference Price (USD)
1+
$2.86000
50+
$2.29500
100+
$2.09100
500+
$1.69320
1,000+
$1.42800
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800 V
  • Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 550mOhm @ 4.8A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 450µA
  • Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 300 V
  • FET Feature: -
  • Power Dissipation (Max): 40W (Tc)
  • Operating Temperature: 150°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220SIS
  • Package / Case: TO-220-3 Full Pack

Related Products

Nexperia USA Inc.

PSMN5R5-60YS,115

Panjit International Inc.

PJQ4401P_R2_00001

Diodes Incorporated

DMN3033LDM-7

Fairchild Semiconductor

SSU2N60BTU

Rohm Semiconductor

RQ3L050GNTB

Rohm Semiconductor

SCT4045DRC15

Microchip Technology

APT8052BFLLG

Top