NTMFS4D2N10MDT1G
onsemi
onsemi
N-CHANNEL SHIELDED GATE POWERTRE
$3.20
Available to order
Reference Price (USD)
1+
$3.20000
500+
$3.168
1000+
$3.136
1500+
$3.104
2000+
$3.072
2500+
$3.04
Exquisite packaging
Discount
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Meet the NTMFS4D2N10MDT1G by onsemi, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The NTMFS4D2N10MDT1G stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose onsemi.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 16.4A (Ta), 113A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 4.3mOhm @ 46A, 10V
- Vgs(th) (Max) @ Id: 4V @ 239µA
- Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 2.8W (Ta), 132W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN, 5 Leads
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